Semiconductor magnetoresistive element (SMRE)

• The resistance value changes depending on the magnetic flux density applied to a semiconductor film in vertical direction.
• The resistance value changes in the same manner when either magnetic field (the north or south polarity) is applied. In other words, the polarity cannot be identified.
• By combining multiple elements, the resistance value change can be taken out as a voltage change.
• Because the magnetoresistive effect has no saturation to the magnetic flux density, large output voltage amplitude can be obtained.
• Because InSb is used for normal semiconductor magnetoresistive element, the resistance value largely depends on the temperature, but our products is Sn-doped with excellent temperature characteristics.
• Because a magnetic field is detected as a plane, the chip size is larger than that of a Hall element.
• The output voltage has very small waveform distortion and is close to the ideal sine wave. Therefore signals with high resolution can be obtained by electric interpolation.
• When the gear rotation id detected with a bias magnet, the DC component of the output voltage no longer depends on the gap.

Hall element (HE)

• The hall voltage changes depending on the magnetic flux density applied to a semiconductor film in vertical direction.
• The hall voltage changes to positive or negative depending on the north or south polarity. In other words, the polarity can be identified.
• In addition to compound semiconductors (GaAs, InAs, InSb), silicone can be used as a material.
• Because a magnetic field is detected as a point, the chip size is smaller than that of a semiconductor magnetoresistive element.

Anisotropic magnetoresistive element (AMRE)

• The resistance value changes depending on the magnetic flux density applied to a ferromagnetic film in parallel direction.
• By combining multiple elements, the resistance value change can be taken out as a voltage change.
• It has high sensitivity to the magnetic flux density, the magnetoresistive effect is, however, saturated with relatively smaller magnetic flux density.
• Because the saturation value for the magnetoresistive effect is only a few percents, the output signal amplitude is relatively small.
• Because a magnetic material is used as a material, it exhibits hysteresis against the magnetic field.