The magnetoresistive elements with excellent temperature characteristics and small individual difference in the electrical characteristics have been implemented.

With our unique semiconductor film manufacturing technology, the temperature drift of neutral voltage has been minimized.

With Asahi Kasei EMC's unique Sn dope technology (Sn: n-type carrier) to InSb, the temperature coefficient of the element resistance value has been drastically reduced.

Temperature coefficient of traditional element resistance value: -20%/ °C (around room temperature)
->Temperature coefficient of product resistance value: -0.2%/ °C (around room temperature)

Since a highly accurate approach is employed to form a single crystal film and the element process using the photolithography method is applied, the elements with very similar and excellent electrical characteristics can be manufactured.