Explanation of terms on semiconductor magnetoresistive element: semiconductor magnetoresistive element: Products: Homepage of Asahi Kasei Microdevices Asahi Kasei Microdevices Magnetic Sensors

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Explanation of terms on semiconductor magnetoresistive element

Maximum rating

Term	Symbol	Explanation	Relevant grade
Term	Symbol	Explanation	MS-0***	MS-P***
Maximum rating	-	The limit value that shall not be exceeded even for a moment	●	●
Allowable loss	PD	The maximum electric power that can apply continuously	●	●
Operation temperature	Topr	The ambient temperature range in which the continuous power supply can be secured	●	●
Storage temperature	Tstg	The ambient temperature range in which no power supply is allowed	●	●

Electrical characteristics

Term	Symbol	Explanation	Relevant grade
Term	Symbol	Explanation	MS-0***	MS-P***
Ambient temperature	Ta	The ambient temperature around semiconductor magnetoresistive element	●	●
Magnetic flux density	B	The number of the magnetic flux lines normal to the magnetic field per unit area. The unit for notation is T (tesla). When G (gauss) is used, a conversion shall be made with 1(mT) = 10(G).	●	●
Control current	Ic	The current applied between the input terminals at measurement	●	●
Control voltage	Vc	The voltage applied between the input terminals at measurement	●	●
Input resistance in non-magnetic field	Rin	The resistance between the input terminals when the output terminal is open in non-magnetic field	●	●
Output resistance in non-magnetic field	Rout	The resistance between the output terminals when the input terminal is open in non-magnetic field	●	●
Phase A neutral voltage in non-magnetic field	V_A(0)	The voltage at the phase A output terminal when the specified voltage is applied between the input terminals in non-magnetic field	●	●
Phase B neutral voltage in non-magnetic field	V_B(0)	The voltage at the phase B output terminal when the specified voltage is applied between the input terminals in non-magnetic field	●	●
Phase A neutral voltage in magnetic field	V_A(B)	The voltage at the phase A output terminal when the specified voltage is applied between the input terminals in magnetic field	●	●
Phase B neutral voltage in magnetic field	V_B(B)	The voltage at the phase B output terminal when the specified voltage is applied between the input terminals in magnetic field	●	●
Input resistance magnetoresistive change ratio	ΔRin/Rin	The rate of magnetoresistive change in input resistance Defined as DRin/Rin = (Rin(B) - Rin(0))/Rin(0)	●	●
Output resistance magnetoresistive change ratio	ΔRout/Rout	The rate of magnetoresistive change in output resistance Defined as DRout/Rout = (Rout(B) - Rout(0))/Rout(0)	●	●