Site of Asahi KASEI MICRODEVICES -Photovoltaic InSb Infrared Sensor-Specifications

Parameter	Symbol	Min.	Max.	Units
Voltage	Vin	-20	20	V
Ambient temperature^*1	Top	-40	85	°C
Storage temperature	Tst	-40	85	°C

Note1: No bias voltage applied.

At room temperature Ta=25°C; unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Condition	Units
Output voltage	Vo	1.0	1.6		500K Blackbody: diameter 22.2 mm, distance 10 cm ^*2	mVrms^*3
Internal resistance	Ro		0.75		Ic = ±100 nA	MΩ

Note2: Measurement conditions are subject to change without notice.

Note3: Light chopping at 10 Hz and lock-in amplifier used.

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