Site of Asahi KASEI MICRODEVICES -Photovoltaic InSb Infrared Sensor-Specifications

Parameter	Symbol	Min.	Max.	Units
Voltage	Vin	-20	20	V
Ambient temperature^*1	Top	-40	85	°C
Storage temperature	Tst	-40	85	°C

Note1: No bias voltage applied.

At room temperature Ta=25°C; unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Condition	Units
Output current	Ip		6		500K Blackbody: diameter 22.2 mm, distance 10 cm ^*2	nA ^*3
Internal resistance	Ro		150		Ic = ±100 nA	kΩ

Note2: Measurement conditions are subject to change without notice.

Note3: Light chopping at 10 Hz and lock-in amplifier used.